型号 |
厂商 |
批号 |
封装 |
说明 |
IPD10N03LA
|
INFINEON |
2010+ |
TO252-3 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) ( |
IPD09N03LB
|
INFINEON |
2010+ |
TO252-3 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) (@ |
IPD090N03LG
|
INFINEON |
2010+ |
TO-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@ |
IPD06N03LB
|
INFINEON |
2010+ |
TO-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) (@ |
IPD06N03LA
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@ |
IPD060N03LG
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@ |
IPD05N03LB
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@ |
IPD05N03LA
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@ |
IPD04N03LB
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD04N03LA
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD040N03LG
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD03N03LB
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPD03N03LA
|
INFINEON |
2010+ |
SOT-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) (@ |
IPBH6N03LA
|
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) ( |
IPB80N06S2L11
|
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V…250V) |
IPB70N10SL16
|
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V…250V) |
IPB47N10S33
|
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V…250V) |
IPB26CNE8N
|
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |
IPB26CN10N
|
INFINEON |
2010+ |
TO-263 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |
IPB16CNE8N
|
INFINEON |
2010+ |
TO263-3-2 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.2 mOhm; RDS (on) (max) |