Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IPD12CN10N |
INFINEON |
2010+ |
TO252-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.4 mOhm; RDS (on) (max) |
IPD10N03LA |
INFINEON |
2010+ |
TO252-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; RDS (on) (max) ( |
IPD09N03LB |
INFINEON |
2010+ |
TO252-3 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.1 mOhm; RDS (on) (max) (@ |
IPD090N03LG |
INFINEON |
2010+ |
TO-252 |
功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 9.0 mOhm; RDS (on) (max) (@ |
IPD06N03LB |
INFINEON |
2010+ |
TO-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) ( @ |
IPD06N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @ |
IPD060N03LG |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @ |
IPD05N03LB |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @ |
IPD05N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) ( @ |
IPD04N03LB |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @ |
IPD04N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @ |
IPD040N03LG |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @ |
IPD03N03LB |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @ |
IPD03N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.2 mOhm; RDS (on) (max) ( @ |
IPBH6N03LA |
INFINEON |
2010+ |
TO-263 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) ( |
IPB80N06S2L11 |
INFINEON |
2010+ |
TO-263 |
Power Transistors N-Channel MOSFETs (20V... 250V) |
IPB70N10SL16 |
INFINEON |
2010+ |
TO-263 |
Power Transistors N-Channel MOSFETs (20V... 250V) |
IPB47N10S33 |
INFINEON |
2010+ |
TO-263 |
Power Transistors N-Channel MOSFETs (20V... 250V) |
IPB26CNE8N |
INFINEON |
2010+ |
TO-263 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |
IPB26CN10N |
INFINEON |
2010+ |
TO-263 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |