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IPI11N03LA
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IPI11N03LA

  • 所属类别：场效应管
  • 产品名称：功率晶体管
  • 厂商：INFINEON
  • 生产批号：2010+
  • 封装：TO-262
  • 库存状态：有库存
  • 库存量：16000
  • 最低订购量：1
  • 详细资料：点击查找IPI11N03LA的pdf资料
  • 点击询价
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IPI11N03LA   功率晶体管    

与IPI11N03LA相关的IC还有：


型号 厂商 批号 封装 说明
IPI16CNE8N INFINEON 2010+ PG-TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max)
IPI16CN10N INFINEON 2010+ PG-TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max
IPI14N03LA INFINEON 2010+ PG-TO262-3 功率晶体管 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
IPI12CNE8N INFINEON 2010+ PG-TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.6 mOhm; RDS (on) (max)
IPI12CN10N INFINEON 2010+ TO-262 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max
IPI09N03LA INFINEON 2010+ TO262-3 功率晶体管
IPI08CNE8N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPI08CN10N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPI06N03LA INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPI06CNE8N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)

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INFINEON品牌产品推荐


型号 厂商 批号 封装 说明
IPI09N03LA INFINEON 2010+ TO262-3 功率晶体管
IPI08CNE8N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPI08CN10N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPI06N03LA INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPI06CNE8N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPI06CN10N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPI05N03LA INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.9 mOhm; RDS (on) (max) (
IPI05CNE8N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPI05CN10N INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPI04N03LA INFINEON 2010+ TO262-3 功率晶体管 N-Channel MOSFETs (20V…250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (
IPI03N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max)
IPFH6N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm;
IPF13N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm;
IPF10N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm;
IPF09N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.8 mOhm;
IPF06N03LA INFINEON 2010+ SOT-252 功率晶体管 Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:61; Connector Shell Size:24; Connecting Termination:Crimp; Circular
IPF05N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.3 mOhm;
IPF04N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.0 mOhm;
IPDH9N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 9.2 mOhm; RDS (on) (max) (
IPDH6N03LA INFINEON 2010+ SOT-252 功率晶体管 N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.0 mOhm; RDS (on) (max) (

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