Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IPI12CNE8N |
INFINEON |
2010+ |
PG-TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.6 mOhm; RDS (on) (max) |
IPI12CN10N |
INFINEON |
2010+ |
TO-262 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max |
IPI11N03LA |
INFINEON |
2010+ |
TO-262 |
Power transistors |
IPI09N03LA |
INFINEON |
2010+ |
TO262-3 |
Power transistors |
IPI08CNE8N |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) |
IPI08CN10N |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max) |
IPI06N03LA |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) ( |
IPI06CNE8N |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) |
IPI06CN10N |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) |
IPI05N03LA |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.9 mOhm; RDS (on) (max) ( |
IPI05CNE8N |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) |
IPI05CN10N |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) |
IPI04N03LA |
INFINEON |
2010+ |
TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) ( |
IPI03N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max) |
IPFH6N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm; |
IPF13N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm; |
IPF10N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm; |
IPF09N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.8 mOhm; |
IPF06N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistor Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:61; Connector Shell Size:24; Connecting Termination:Crimp; Circular |
IPF05N03LA |
INFINEON |
2010+ |
SOT-252 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.3 mOhm; |