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IPI16CN10N
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IPI16CN10N

  • Category:FETs
  • Product Name:Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max
  • Manufacturers:INFINEON
  • Production Batch Number:2010+
  • Encapsulation:PG-TO262-3
  • Stock Status:There is stock
  • Stock Quantity:16000
  • Minimum order quantity: 1
  • Details:Click to find the PDF of the IPI16CN10N
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  • Product introduction

IPI16CN10N Power transistorsN-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 53.0 A

andIPI16CN10NRelated ICs are:


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IPI50CN10N INFINEON 2010+ PG-TO262-3 Power transistors
IPI35CN10N INFINEON 2010+ PG-TO262-3 Power transistors
IPI26CNE8N INFINEON 2010+ PG-TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max)
IPI26CN10N INFINEON 2010+ PG-TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max
IPI16CNE8N INFINEON 2010+ PG-TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max)
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IPI12CNE8N INFINEON 2010+ PG-TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.6 mOhm; RDS (on) (max)
IPI12CN10N INFINEON 2010+ TO-262 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max
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Model Manufacturers lot number encapsulation illustrate
IPI14N03LA INFINEON 2010+ PG-TO262-3 MULTI DVI DAISY CHAINABLE RECEIVER -FIBER
IPI12CNE8N INFINEON 2010+ PG-TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 12.6 mOhm; RDS (on) (max)
IPI12CN10N INFINEON 2010+ TO-262 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.9 mOhm; RDS (on) (max
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IPI08CNE8N INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPI08CN10N INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.5 mOhm; RDS (on) (max)
IPI06N03LA INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 6.2 mOhm; RDS (on) (max) (
IPI06CNE8N INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPI06CN10N INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max)
IPI05N03LA INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.9 mOhm; RDS (on) (max) (
IPI05CNE8N INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPI05CN10N INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max)
IPI04N03LA INFINEON 2010+ TO262-3 Power Transistors N-Channel MOSFETs (20V... 250V); Package: P-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 4.2 mOhm; RDS (on) (max) (
IPI03N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 25.0 V; RDS (on) (max) (@10V): 3.0 mOhm; RDS (on) (max)
IPFH6N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm;
IPF13N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 12.8 mOhm;
IPF10N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 10.4 mOhm;
IPF09N03LA INFINEON 2010+ SOT-252 Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO252-3; Package: Reverse DPAK (Reverse TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.8 mOhm;
IPF06N03LA INFINEON 2010+ SOT-252 Power Transistor Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:61; Connector Shell Size:24; Connecting Termination:Crimp; Circular

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