Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IPP030N10N3 |
INFINEON |
2010+ |
TO-220 |
Power transistors |
IPP028N08N3 |
INFINEON |
2010+ |
TO-220 |
Power transistors |
IPP024N06N3 |
INFINEON |
2010+ |
TO-220 |
Power transistors |
IPP015N04N |
INFINEON |
2010+ |
PG-TO262-3 |
Power transistors |
IPI80CN10N |
INFINEON |
2010+ |
PG-TO262-3 |
Power transistors |
IPI50CN10N |
INFINEON |
2010+ |
PG-TO262-3 |
Power transistors |
IPI35CN10N |
INFINEON |
2010+ |
PG-TO262-3 |
Power transistors |
IPI26CNE8N |
INFINEON |
2010+ |
PG-TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) |
IPI26CN10N |
INFINEON |
2010+ |
PG-TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max |
IPI16CNE8N |
INFINEON |
2010+ |
PG-TO262-3 |
Power Transistors N-Channel MOSFETs (20V... 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 85.0 V; RDS (on) (max) (@10V): 16.5 mOhm; RDS (on) (max) |
IPI16CN10N |
INFINEON |
2010+ |
PG-TO262-3 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 100,0 V; RDS (ein) (max) (@10V): 16,5 mOhm; RDS (ein) (max |
IPI14N03LA |
INFINEON |
2010+ |
PG-TO262-3 |
MULTI DVI DAISY VERKETTBARER EMPFÄNGER -FIBER |
IPI12CNE8N |
INFINEON |
2010+ |
PG-TO262-3 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 85,0 V; RDS (ein) (max) (@10V): 12,6 mOhm; RDS (ein) (max.) |
IPI12CN10N |
INFINEON |
2010+ |
TO-262 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 100,0 V; RDS (ein) (max) (@10V): 12,9 mOhm; RDS (ein) (max |
IPI11N03LA |
INFINEON |
2010+ |
TO-262 |
Power transistors |
IPI09N03LA |
INFINEON |
2010+ |
TO262-3 |
Power transistors |
IPI08CNE8N |
INFINEON |
2010+ |
TO262-3 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 100,0 V; RDS (ein) (max) (@10V): 8,5 mOhm; RDS (ein) (max.) |
IPI08CN10N |
INFINEON |
2010+ |
TO262-3 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 100,0 V; RDS (ein) (max) (@10V): 8,5 mOhm; RDS (ein) (max.) |
IPI06N03LA |
INFINEON |
2010+ |
TO262-3 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: P-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 25,0 V; RDS (ein) (max) (@10V): 6,2 mOhm; RDS (ein) (max) ( |
IPI06CNE8N |
INFINEON |
2010+ |
TO262-3 |
Leistungstransistoren N-Kanal-MOSFETs (20V... 250V); Gehäuse: PG-TO262-3; Gehäuse: I2PAK (TO-262); VDS (max.): 100,0 V; RDS (ein) (max) (@10V): 6,5 mOhm; RDS (ein) (max.) |