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IRF610
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IRF610

  • Category:FETs
  • Product Name:3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TO-220
  • Stock Status:There is stock
  • Stock Quantity:80000
  • Minimum order quantity: 1
  • Details:Нажмите здесь, чтобы найти информацию о IRF610 в формате PDF
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  • Product introduction

IRF6103.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)

andIRF610Related ICs are:


Model Manufacturers lot number encapsulation illustrate
IRF610STRLPBF VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610STRL VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610SPBF VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610S VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610PBF VISHAY 10+ TO-220 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF612 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614PBF VISHAY 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614 VISHAY 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)

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VISHAY brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF612 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614PBF VISHAY 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614 VISHAY 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF615 VISHAY 10+ TO-220 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB
IRF620STRRPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620STRR VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620STRLPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620STRL VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620SPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620S VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620PBF VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620 VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))

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