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IRF610SPBF
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IRF610SPBF

  • Category:FETs
  • Product Name:3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:80000
  • Minimum order quantity: 1
  • Details:Нажмите, чтобы найти PDF-файл IRF610SPBF
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  • Product introduction

IRF610SPBF3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)

andIRF610SPBFRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
UC2844 TI 09+ 14SOIC, 8PDIP, 8SOIC Current mode PWM controller
IRF610STRRPBF VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610STRR VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610STRLPBF VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610STRL VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610S VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610PBF VISHAY 10+ TO-220 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610 VISHAY 10+ TO-220 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF612 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)

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Model Manufacturers lot number encapsulation illustrate
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VISHAY brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF610S VISHAY 10+ TO-263 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610PBF VISHAY 10+ TO-220 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF610 VISHAY 10+ TO-220 3.3A, 200V, 1.500 Ohm, N-Channel PowerMOSFET (3.3A, 200V, 1.500 Ohm, N-Channel Enhanced Power MOS FET)
IRF612 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 3.5A, 150-200V
IRF614SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
IRF614PBF VISHAY 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
ИРФ614 VISHAY 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (250V drain-to-source voltage, 2.0Ω on-resistance, 2.8A leakage current)
ИРФ615 VISHAY 10+ TO-220 ТРАНЗИСТОР | МОП-транзисторы | N-КАНАЛ | 250 В (BR) DSS | 1.6A I(D) | ТО-220АБ
IRF620STRRPBF VISHAY 10+ TO-263 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620STRR VISHAY 10+ TO-263 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620STRLPBF VISHAY 10+ TO-263 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620STRL VISHAY 10+ TO-263 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620SPBF VISHAY 10+ TO-263 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620S VISHAY 10+ TO-263 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620PBF VISHAY 10+ TO-220 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF620 VISHAY 10+ TO-220 5,0 А, 200 В, 0,800 Ом, N-канальный силовой МОП-транзистор (5,0 А, 200 В, 0,800 Ом, N-канальный МОП-полевой транзистор повышенной мощности)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))

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