| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| IRF615 |
VISHAY |
10+ |
TO-220 |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB |
| IRF620STRRPBF |
VISHAY |
10+ |
TO-263 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620STRR |
VISHAY |
10+ |
TO-263 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620STRLPBF |
VISHAY |
10+ |
TO-263 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620STRL |
VISHAY |
10+ |
TO-263 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620SPBF |
VISHAY |
10+ |
TO-263 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620S |
VISHAY |
10+ |
TO-263 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620PBF |
VISHAY |
10+ |
TO-220 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF620 |
VISHAY |
10+ |
TO-220 |
5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管) |
| IRF621 |
VISHAY |
10+ |
TO-220 |
N-Channel Power MOSFETs, 7A, 150-200V |
| IRF622 |
VISHAY |
10+ |
TO-220 |
N-Channel Power MOSFETs, 7A, 150-200V |
| IRF624STRR |
VISHAY |
10+ |
TO-263 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A)) |
| IRF624STRL |
VISHAY |
10+ |
TO-263 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A)) |
| IRF624SPBF |
VISHAY |
10+ |
TO-263 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A)) |
| IRF624S |
VISHAY |
10+ |
TO-263 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A)) |
| IRF624PBF |
Vishay |
10+ |
TO-220 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A)) |
| IRF624 |
Vishay |
10+ |
TO-220 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A)) |
| IRF630STRRPBF |
Vishay |
10+ |
TO-263 |
N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET |
| IRF630STRR |
Vishay |
10+ |
TO-263 |
N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET |
| IRF630STRLPBF |
Vishay |
10+ |
TO-263 |
N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET |