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IRF620STRRPBF
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IRF620STRRPBF

  • 所属类别：场效应管
  • 产品名称：5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：80000
  • 最低订购量：1
  • 详细资料：点击查找IRF620STRRPBF的pdf资料
  • 点击询价
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  • 产品介绍

IRF620STRRPBF   5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)

与IRF620STRRPBF相关的IC还有：


型号 厂商 批号 封装 说明
IRF614SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614S VISHAY 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614PBF VISHAY 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF614 VISHAY 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为2.0Ω，漏电流为2.8A）)
IRF615 VISHAY 10+ TO-220 TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) | TO-220AB
IRF620STRR VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRLPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRL VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620SPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620S VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)

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VISHAY品牌产品推荐


型号 厂商 批号 封装 说明
IRF620STRR VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRLPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620STRL VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620SPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620S VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620PBF VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF620 VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N沟道增强型功率MOS场效应管)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624PBF Vishay 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF624 Vishay 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为1.1Ω，漏电流为4.1A）)
IRF630STRRPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET)
IRF630STRR Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET)
IRF630STRLPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET)
IRF630STRL Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET)
IRF630SPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET(N沟道功率MOSFET)

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