Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IRF6215LPBF |
INFINEON |
2010+ |
TO-263 |
150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
IRF6215STRLPBF |
INFINEON |
2010+ |
TO-263 |
150V N-Channel FET -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF6215STRL with Lead Free Packaging |
IRF6215SPBF |
INFINEON |
2010+ |
TO-263 |
N-channel FET HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A ) |
BSO303P |
INFINEON |
2010+ |
SOP-8 |
N-Channel FETs P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R |
BSO303SP |
INFINEON |
11+ |
SOP-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0 |
BSC110N06NS3 |
INFINEON |
11+ |
TDSON-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
BSO301SP |
INFINEON |
11+ |
SOP-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
BSO080P03S |
INFINEON |
11+ |
SOP-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSO080P03NS3 |
INFINEON |
11+ |
SOP-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSO080P03NS3E |
INFINEON |
11+ |
SOP-8 |
N-channel 30.0 V FET P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSC110N06NS3G |
INFINEON |
11+ |
TDSON-8 |
N-Channel 60.0 V 50.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
BSC106N025SG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III) 2 Power-Transistor |
BSC100N06LS3G |
INFINEON |
11+ |
TDSON-8 |
N-Channel 60.0 V 50.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
BSC152N10NSFG |
INFINEON |
11+ |
TDSON-8 |
N-Channel 100.0 V 63.0 A FET N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
BSC085N025SG |
INFINEON |
11+ |
TDSON-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC076N06NS3G |
INFINEON |
11+ |
TDSON-8 |
N-channel 60.0 V 50.0 A FETs N-Channel MOSFETs (20V... 250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
BSC072N025SG |
INFINEON |
11+ |
TDSON-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC067N06LS3G |
INFINEON |
11+ |
TDSON-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC118N10NSG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |
BSC048N025SG |
INFINEON |
11+ |
P-DSO-8 |
N-channel FET OptiMOS (III)2 Power-Transistor |