åå· |
åå |
æ¹å· |
å°è£
|
说æ |
IRF6215SPBF |
INFINEON |
2010+ |
TO-263 |
Nééåºæåºç®¡ HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ã , ID=-13A ) |
BSO303P |
INFINEON |
2010+ |
SOP-8 |
Nééåºæåºç®¡ P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 32.0 mOhm; R |
BSO303SP |
INFINEON |
11+ |
SOP-8 |
Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 21.0 mOhm; RDS (on) (max) (@4.5V): 31.0 |
BSC110N06NS3 |
INFINEON |
11+ |
TDSON-8 |
Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
BSO301SP |
INFINEON |
11+ |
SOP-8 |
Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: P-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): 12.0 m |
BSO080P03S |
INFINEON |
11+ |
SOP-8 |
Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSO080P03NS3 |
INFINEON |
11+ |
SOP-8 |
Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSO080P03NS3E |
INFINEON |
11+ |
SOP-8 |
Néé30.0 V åºæåºç®¡P-Channel MOSFETs; Package: PG-DSO-8; Package: SO-8; VDS (max): -30.0 V; RDS (on) (max) (@10V): 8.0 mOhm; RDS (on) (max) (@4.5V): -; RD |
BSC110N06NS3G |
INFINEON |
11+ |
TDSON-8 |
Néé60.0 V 50.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (o |
BSC106N025SG |
INFINEON |
11+ |
P-DSO-8 |
Nééåºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC100N06LS3G |
INFINEON |
11+ |
TDSON-8 |
Néé 60.0 V 50.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 10.0 mOhm; RDS ( |
BSC152N10NSFG |
INFINEON |
11+ |
TDSON-8 |
Néé 100.0 V 63.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 100.0 V; RDS (on) (max) (@10V): 15.2 mOhm; RDS |
BSC085N025SG |
INFINEON |
11+ |
TDSON-8 |
Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC076N06NS3G |
INFINEON |
11+ |
TDSON-8 |
Néé60.0 V 50.0 A åºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.6 mOhm; RDS (o |
BSC072N025SG |
INFINEON |
11+ |
TDSON-8 |
Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC067N06LS3G |
INFINEON |
11+ |
TDSON-8 |
Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC118N10NSG |
INFINEON |
11+ |
P-DSO-8 |
Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC048N025SG |
INFINEON |
11+ |
P-DSO-8 |
Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC037N025SG |
INFINEON |
11+ |
P-DSO-8 |
Néé åºæåºç®¡OptiMOSã¢2 Power-Transistor |
BSC035N04LSG |
INFINEON |
11+ |
SON-8 |
Néé 40.0 V; 100.0 Aåºæåºç®¡N-Channel MOSFETs (20Vâ¦250V); Package: PG-TDSON-8; Package: SuperSO8; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.5 mOhm; RDS ( |