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IRF622
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IRF622

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFETs, 7A, 150-200V
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-220
  • 库存状态：有库存
  • 库存量：80000
  • 最低订购量：1
  • 详细资料：点击查找IRF622的pdf资料
  • 点击询价
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  • Product Introduction

IRF622   N-Channel Power MOSFETs, 7A, 150-200V

Other ICs related to IRF622 are:


Model Manufacturers lot number encapsulation illustrate
IRF620SPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm,,N-Channel Enhanced Power MOS FETs)
IRF620S VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm,,N-Channel Enhanced Power MOS FETs)
IRF620PBF VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm,,N-Channel Enhanced Power MOS FETs)
IRF620 VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm,,N-Channel Enhanced Power MOS FETs)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
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IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
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VISHAY brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
IRF624PBF Vishay 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 1.1Ω on-resistance, 4.1A leakage current))
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IRF630STRR Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRLPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRL Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630SPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
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