home page>Product Center> FET
IRF622
Product images are for illustrative purposes only
Product details are welcome upon request

IRF622

  • Category:FETs
  • Product Name:N-Channel Power MOSFETs, 7A, 150-200V
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TO-220
  • Stock Status:There is stock
  • Stock Quantity:80000
  • Minimum order quantity: 1
  • Details:点击查找IRF622的pdf资料
  • Click Request a quote
Contact usOnline customer service1 Online customer service2 Click Send email
  • Product introduction

IRF622N-Channel Power MOSFETs, 7A, 150-200V

andIRF622Related ICs are:


Model Manufacturers lot number encapsulation illustrate
IRF620SPBF VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620S VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620PBF VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620 VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
UC2843AQ TI 08+ 14SOIC, 8SOIC Automotive current mode PWM controller

Popular searches


Model Manufacturers lot number encapsulation illustrate
PW70d(2x10432Ω/83°） FSG 2023+ potentiometer PW70D(2*1043Ω 1%/83°）（1700Z04-257.106)
PW70d FSG 2023+ potentiometer PW70D(2*1043Ω 1%/83°）（1700Z04-257.106)
S34ML16G202BHI000 Flip Electronics 2051+ 63BGA 16 Gb, 3 V, 4-bit ECC, x8 I/O, SLC NAND Flash Memory for Embedded
FRCIR06RGG18-20S-F80-V0-M20-1.5F ITTVEAM 2023+ connector Connectors, Circular Connectors, Circular Plugs & Receptacles
CL1215-02P72ET-U2 Schaltbau 2023+ Contactors CL1215/02 P 72ET-U2 1, 2 and 3 pole AC and DC NO contactors for voltages up to 1,500 V
CL1115-02P72ET-U2 Schaltbau 2023+ Contactors 1, 2 and 3 pole AC and DC NO contactors for voltages up to 1,500 V
D-U204N-KLGQ Mors Smitt 2023+ Relays No magnetic arc blow-out
D-U204N-KLCQ Mors Smitt 2023+ Relays No magnetic arc blow-out
MIP30F00830-S1048 Amphenol Positronic 2023+ connector MIP series connectors
C163C/110EV-R1 Schaltebao 2023+ Contactors Contactors
F670-H4V-XUU LEACH 2023+ Relays F670-H4V-XUU+SHKE470-110-AD
F670-H4VP-XUXU LEACH 2023+ Relays F670-H4VP-XUXU+SFE670-1-1
AZ16-12ZI-B1-1747-M20 SCHMERSAL 2023+ switch Safety switches
RX2025GE1 Surio 2023+ connector Extract, Remove, and Insert Tools Contact extraction tool #16
5106.021.09.24 Surio 2023+ connector Extract, remove, and insert tools Extract tool with pop-up
ABMPSE06T28M4SV0N AB Connectors 2023+ connector Plug with RFI Ground
ABMPSE06T36M2SV0N AB Connectors 2023+ connector Plug with RFI Ground
ABMP18T28M13SV0N AB Connectors 2023+ connector RAIL AND MILITARY LAND SYSTEMS
ABCIRHSE06JE1812SCNF80M32V0 AB Connectors 2023+ connector Halogen Free Bayonet Lock Connector Series
TSW-101-06-LM-D samtec 2023+ connector Classic PCB Header Strips, 0.100" pitch

VISHAY brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624PBF Vishay 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624 Vishay 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF630STRRPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRR Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRLPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRL Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630SPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630S Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630PBF Vishay 10+ TO-220 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRFR224TRR VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK
IRFR224TRPBF VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK
IRFR224TRLPBF VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK
IRFR224TRL VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK
IRFR224TR VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK
IRFR224PBF VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK
IRFR224 VISHAY 10+ SOT252 MOSFET N-CH 250V 3.8A DPAK

Categorical search

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号

Related Links

wirewound resistor rectangular connector contacts crimping pliers term block hdr insulated terminals bus plug needle pusher cement resistance circular connectors ph connector