IRF624PBF
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IRF624PBF

  • Category:FETs
  • Product Name:N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
  • Manufacturers:Vishay
  • Production Batch Number:10+
  • Encapsulation:TO-220
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
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  • Product introduction

IRF624PBFN-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))

andIRF624PBFRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
UC2824 TI 09+10+ 16PDIP, 16SOIC High-speed PWM controller
UC2823B TI 10+ 16PDIP, 16SOIC High-speed PWM controller
UC2823A TI 09+ 16PDIP, 16SOIC, 20PLCC High-speed PWM controller
UC2823 TI 09+ 16PDIP, 16SOIC, 20PLCC High-speed PWM controller
UC28025 TI 13+ 16PDIP, 16SOIC Economical high-speed PWM controller
IRF624 Vishay 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF630STRRPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRR Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRLPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRL Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET

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Model Manufacturers lot number encapsulation illustrate
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