IRF624SPBF
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IRF624SPBF

  • Category:FETs
  • Product Name:N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:80000
  • Minimum order quantity: 1
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  • Product introduction

IRF624SPBFN-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))

andIRF624SPBFRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IRF620 VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, PowerMOSFET de canal N (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS MOS FET)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRR VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
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UC2843 TI 10+ 14SOIC, 8SOIC Automotive current mode PWM controller

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VISHAY brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624PBF Vishay 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
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