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IRF624STRR
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IRF624STRR

  • Category:FETs
  • Product Name:N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TO-263
  • Stock Status:There is stock
  • Stock Quantity:80000
  • Minimum order quantity: 1
  • Details:Click to find the PDF of the IRF624STRR
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  • Product introduction

IRF624STRRN-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))

andIRF624STRRRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IRF620S VISHAY 10+ TO-263 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620PBF VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF620 VISHAY 10+ TO-220 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET (5.0A, 200V, 0.800 Ohm, N-Channel Enhanced Power MOS FET)
IRF621 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF622 VISHAY 10+ TO-220 N-Channel Power MOSFETs, 7A, 150-200V
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
UC2843AQ TI 08+ 14SOIC, 8SOIC Automotive current mode PWM controller
UC2843A-Q1 TI 10+ 8SOIC Automotive current mode PWM controller

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VISHAY brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF624STRL VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624SPBF VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624S VISHAY 10+ TO-263 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624PBF Vishay 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF624 Vishay 10+ TO-220 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 1.1Ω, leakage current of 4.1A))
IRF630STRRPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRR Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRLPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630STRL Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630SPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630S Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630PBF Vishay 10+ TO-220 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
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