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IRF631
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IRF631

  • Category:FETs
  • Product Name:N-Channel Power MOSFETs, 12A, 150-200 V
  • Manufacturers:IR
  • Production Batch Number:10+
  • Encapsulation:TO-220
  • Stock Status:There is stock
  • Stock Quantity:8000
  • Minimum order quantity: 1
  • Details:Click here to find PDF information on IRF631
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  • Product introduction

IRF631N-Channel Power MOSFETs, 12A, 150-200 V

andIRF631Related ICs are:


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IRF630SPBF Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630S Vishay 10+ TO-263 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF630PBF Vishay 10+ TO-220 N-Channel 200V-0.35Ω-9A - TO-220/FP MESH OVERLAYTM MOSFET
IRF633 IR 10+ TO-220 N-Channel Power MOSFETs, 12A, 150-200 V
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IRF634STRRPBF IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634STRR IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
UC2527A TI 09+ 16PDIP Regulated pulse width modulator
IRF634STRLPBF IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)

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IR brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF634STRRPBF IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634STRR IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634STRLPBF IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634STRL IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634SPBF IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634S IR 10+ TO-263 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634PBF IR 10+ TO-220 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634NSPBF IR 10+ TO-220 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634NS IR 10+ TO-220 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634NPBF IR 10+ TO-220 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
IRF634N IR 10+ TO-220 N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current)
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IRF640STRL IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

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