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IRF634STRL
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IRF634STRL

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：8000
  • 最低订购量：1
  • 详细资料：点击查找IRF634STRL的pdf资料
  • 点击询价
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  • 产品介绍

IRF634STRL   N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)

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IRF634STRR IR 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
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IRF634SPBF IR 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634S IR 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634PBF IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NSPBF IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NS IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)

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型号 厂商 批号 封装 说明
IRF634SPBF IR 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634S IR 10+ TO-263 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634PBF IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NSPBF IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NS IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634NPBF IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634N IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF634 IR 10+ TO-220 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
IRF640PBF IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640LPBF IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640L IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640 IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRRPBF IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRR IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRLPBF IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
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IRF640SPBF IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
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