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IRF634STRR
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IRF634STRR

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.45Ω，漏电流为8.1A）)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-263
  • 库存状态：有库存
  • 库存量：8000
  • 最低订购量：1
  • 详细资料：点击查找IRF634STRR的pdf资料
  • 点击询价
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  • Product Introduction

IRF634STRR   N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))

IRF634STRR-related ICs include:


Model Manufacturers lot number encapsulation illustrate
IRF633 IR 10+ TO-220 N-Channel Power MOSFETs, 12A, 150-200 V
IRF632 IR 10+ TO-220 N-Channel Power MOSFETs, 12A, 150-200 V
IRF631 IR 10+ TO-220 N-Channel Power MOSFETs, 12A, 150-200 V
UC28023 TI 09+08+ 16PDIP, 16SOIC Economical, high-speed PWM controller
IRF634STRRPBF IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
UC2527A TI 09+ 16PDIP Regulated pulse width modulator
IRF634STRLPBF IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634STRL IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634SPBF IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634S IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))

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IR brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRF634STRLPBF IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634STRL IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634SPBF IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634S IR 10+ TO-263 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634PBF IR 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634NSPBF IR 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634NS IR 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634NPBF IR 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634N IR 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF634 IR 10+ TO-220 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.45Ω on-resistance, 8.1A leakage current))
IRF640PBF IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640LPBF IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640L IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640 IR 10+ TO-220 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRRPBF IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRR IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRLPBF IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640STRL IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640SPBF IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
IRF640S IR 10+ TO-263 Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)

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