| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| IRFU5410PBF |
IR |
10+ |
TO-251 |
HEXFET Power MOSFET |
| IRFU9120NPBF |
IR |
10+ |
TO-251 |
LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 2280; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; P |
| IRFR5410TRLPBF |
IR |
10+ |
TO-252 |
HEXFET Power MOSFET |
| IRFR5410TRRPBF |
IR |
10+ |
TO-252 |
HEXFET Power MOSFET |
| IRFR5410PBF |
IR |
10+ |
TO-252 |
HEXFET Power MOSFET |
| IRFR9120NTRRPBF |
IR |
10+ |
SOT-263 |
P Channel Surface Mount HEXFET Power MOSFET |
| IRFR9120NCTRPBF |
IR |
10+ |
SOT-263 |
P Channel Surface Mount HEXFET Power MOSFET |
| IRF5210LPBF |
IR |
10+ |
SOT-263 |
HEXFET Power MOSFET |
| IRF9540NLPBF |
IR |
10+ |
SOT-263 |
HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mヘ , ID = -23A ) |
| IRF9530NLPBF |
IR |
10+ |
TO-262 |
Advanced Process Technology Surface Mount |
| IRF9520NLPBF |
IR |
10+ |
TO-235 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF9520NL with Lead Free Packaging |
| IRF633 |
IR |
10+ |
TO-220 |
N-Channel Power MOSFETs, 12A, 150-200 V |
| IRF632 |
IR |
10+ |
TO-220 |
N-Channel Power MOSFETs, 12A, 150-200 V |
| IRF631 |
IR |
10+ |
TO-220 |
N-Channel Power MOSFETs, 12A, 150-200 V |
| IRF634STRRPBF |
IR |
10+ |
TO-263 |
N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current) |
| IRF634STRR |
IR |
10+ |
TO-263 |
N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current) |
| IRF634STRLPBF |
IR |
10+ |
TO-263 |
N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current) |
| IRF634STRL |
IR |
10+ |
TO-263 |
N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current) |
| IRF634SPBF |
IR |
10+ |
TO-263 |
N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current) |
| IRF634S |
IR |
10+ |
TO-263 |
N-Channel Power MOSFETs (250V drain-to-source voltage, 0.45Ω on-resistance, 8.1A leakage current) |