Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IRFL110 |
IR |
11+ |
SOT-223 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A) |
IRFP044PBF |
IR |
11+ |
TO-247 |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP044N with Lead Free Packaging |
IRFP044 |
IR |
11+ |
TO-247 |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP044N with Lead Free Packaging |
IRFP048RPBF |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048R |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048PBF |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP048 |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A) |
IRFP054PBF |
IR |
11+ |
TO-247 |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
IRFP054 |
IR |
11+ |
TO-247 |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
IRFP064PBF |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
IRFP064 |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
IRFP140PBF |
IR |
11+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 100V, on-resistance of 0.052Ω, leakage current of 31A) |
IRFP140 |
IR |
11+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 100V, on-resistance of 0.052Ω, leakage current of 31A) |
IRFP150PBF |
IR |
11+ |
TO-247 |
40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET) |
IRFP150 |
IR |
11+ |
TO-247 |
40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET) |
IRFP240PBF |
IR |
10+ |
TO-247 |
HEXFET power MOS FET |
IRFP240 |
IR |
10+ |
TO-247 |
HEXFET power MOS FET |
IRFP2410 |
IR |
10+ |
TO-247 |
100V, 61A, N-Channel HEXFET Power MOSFET (100V, 61A, N-Channel HEXFET Power MOS FET) |
IRFP244PBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A) |
IRFP244 |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A) |