| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| IRFP054 |
IR |
11+ |
TO-247 |
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging |
| IRFP064PBF |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
| IRFP064 |
IR |
11+ |
TO-247 |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A) |
| IRFP140PBF |
IR |
11+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 100V, on-resistance of 0.052Ω, leakage current of 31A) |
| IRFP140 |
IR |
11+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 100V, on-resistance of 0.052Ω, leakage current of 31A) |
| IRFP150PBF |
IR |
11+ |
TO-247 |
40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET) |
| IRFP150 |
IR |
11+ |
TO-247 |
40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET) |
| IRFP240PBF |
IR |
10+ |
TO-247 |
HEXFET power MOS FET |
| IRFP240 |
IR |
10+ |
TO-247 |
HEXFET power MOS FET |
| IRFP2410 |
IR |
10+ |
TO-247 |
100V, 61A, N-Channel HEXFET Power MOSFET (100V, 61A, N-Channel HEXFET Power MOS FET) |
| IRFP244PBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A) |
| IRFP244 |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A) |
| IRFP250PBF |
IR |
09+ |
TO-247 |
33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FET) |
| IRFP250 |
IR |
09+ |
TO-247 |
33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FET) |
| IRFP251 |
IR |
09+ |
TO-247 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247 |
| IRFP254PBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP254NPBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP254N |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP254 |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP260PBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 200V and on-resistance 55mΩ) |