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IRFP064
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IRFP064

  • 所属类别：场效应管
  • 产品名称：Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
  • 厂商：IR
  • 生产批号：11+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP064的pdf资料
  • 点击询价
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  • Product Introduction

IRFP064     Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)

ICs related to IRFP064 include:


Model Manufacturers lot number encapsulation illustrate
IRFP048PBF IR 11+ TO-247 Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
IRFP048 IR 11+ TO-247 Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)
IRFP054PBF IR 11+ TO-247 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging
IRFP054 IR 11+ TO-247 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging
IRFP064PBF IR 11+ TO-247 Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP140PBF IR 11+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (100V drainage voltage, 0.052Ω on-resistance, 31A leakage current))
IRFP140 IR 11+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (100V drainage voltage, 0.052Ω on-resistance, 31A leakage current))
IRFP150PBF IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP150 IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP240PBF IR 10+ TO-247 HEXFET power MOS FETs

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IR brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRFP140PBF IR 11+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (100V drainage voltage, 0.052Ω on-resistance, 31A leakage current))
IRFP140 IR 11+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (100V drainage voltage, 0.052Ω on-resistance, 31A leakage current))
IRFP150PBF IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP150 IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP240PBF IR 10+ TO-247 HEXFET power MOS FETs
IRFP240 IR 10+ TO-247 HEXFET power MOS FETs
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IRFP244PBF IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.28Ω on-resistance, 16A leakage current))
IRFP244 IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.28Ω on-resistance, 16A leakage current))
IRFP250PBF IR 09+ TO-247 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP250 IR 09+ TO-247 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP251 IR 09+ TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current))
IRFP254NPBF IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current))
IRFP254N IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current))
IRFP254 IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current))
IRFP260PBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with 200V maximum leakage breakdown voltage and on-resistance 55mΩ)
IRFP260 IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with 200V maximum leakage breakdown voltage and on-resistance 55mΩ)
IRFP264PBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω)
IRFP264NPBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω)

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