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IRFP150PBF
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IRFP150PBF

  • Category:FETs
  • Product Name:40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET)
  • Manufacturers:IR
  • Production Batch Number:11+
  • Encapsulation:TO-247
  • Stock Status:There is stock
  • Stock Quantity:9000
  • Minimum order quantity: 1
  • Details:Click to find the IRFP150PBF PDF material
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  • Product introduction

IRFP150PBF40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET)

andIRFP150PBFRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IRFP054 IR 11+ TO-247 55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP054N with Lead Free Packaging
IRFP064PBF IR 11+ TO-247 Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP064 IR 11+ TO-247 Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
IRFP140PBF IR 11+ TO-247 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 100V, on-resistance of 0.052Ω, leakage current of 31A)
IRFP140 IR 11+ TO-247 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 100V, on-resistance of 0.052Ω, leakage current of 31A)
IRFP150 IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET)
IRFP240PBF IR 10+ TO-247 HEXFET power MOS FET
IRFP240 IR 10+ TO-247 HEXFET power MOS FET
IRFP2410 IR 10+ TO-247 100V, 61A, N-Channel HEXFET Power MOSFET (100V, 61A, N-Channel HEXFET Power MOS FET)
IRFP244PBF IR 09+ TO-247 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A)

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IR brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRFP150 IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FET)
IRFP240PBF IR 10+ TO-247 HEXFET power MOS FET
IRFP240 IR 10+ TO-247 HEXFET power MOS FET
IRFP2410 IR 10+ TO-247 100V, 61A, N-Channel HEXFET Power MOSFET (100V, 61A, N-Channel HEXFET Power MOS FET)
IRFP244PBF IR 09+ TO-247 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A)
IRFP244 IR 09+ TO-247 N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A)
IRFP250PBF IR 09+ TO-247 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FET)
IRFP250 IR 09+ TO-247 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FET)
IRFP251 IR 09+ TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR 09+ TO-247 N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current)
IRFP254NPBF IR 09+ TO-247 N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current)
IRFP254N IR 09+ TO-247 N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current)
IRFP254 IR 09+ TO-247 N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current)
IRFP260PBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 200V and on-resistance 55mΩ)
IRFP260 IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 200V and on-resistance 55mΩ)
IRFP264PBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 250V and 0.075Ω on-resistance)
IRFP264NPBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 250V and 0.075Ω on-resistance)
IRFP264N IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 250V and 0.075Ω on-resistance)
IRFP9140PBF IR 10+ TO-247 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS FETs)
IRFP9140 IR 10+ TO-247 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS FETs)

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