| Model | Manufacturers | lot number | encapsulation | illustrate | 
| IRFP2410 | IR | 10+ | TO-247 | 100V, 61A, N-Channel HEXFET Power MOSFET | 
| IRFP244PBF | IR | 09+ | TO-247 | N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.28Ω on-resistance, 16A leakage current)) | 
| IRFP244 | IR | 09+ | TO-247 | N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.28Ω on-resistance, 16A leakage current)) | 
| IRFP250PBF | IR | 09+ | TO-247 | 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FETs) | 
| IRFP250 | IR | 09+ | TO-247 | 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FETs) | 
| IRFP251 | IR | 09+ | TO-247 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247 | 
| IRFP254PBF | IR | 09+ | TO-247 | N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) | 
| IRFP254NPBF | IR | 09+ | TO-247 | N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) | 
| IRFP254N | IR | 09+ | TO-247 | N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) | 
| IRFP254 | IR | 09+ | TO-247 | N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) | 
| IRFP260PBF | IR | 10+ | TO-247 | N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with 200V maximum leakage breakdown voltage and on-resistance 55mΩ) | 
| IRFP260 | IR | 10+ | TO-247 | N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with 200V maximum leakage breakdown voltage and on-resistance 55mΩ) | 
| IRFP264PBF | IR | 10+ | TO-247 | N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω) | 
| IRFP264NPBF | IR | 10+ | TO-247 | N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω) | 
| IRFP264N | IR | 10+ | TO-247 | N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω) | 
| IRFP9140PBF | IR | 10+ | TO-247 | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS) | 
| IRFP9140 | IR | 10+ | TO-247 | 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS) | 
| IRFR010TRR | IR | 10+ | TO-252 | MOSFET N-CH 50V 8.2A DPAK | 
| IRFR010TRL | IR | 10+ | TO-252 | MOSFET N-CH 50V 8.2A DPAK | 
| IRFR010TR | IR | 10+ | TO-252 | MOSFET N-CH 50V 8.2A DPAK |