| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| IRFP244PBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A) |
| IRFP244 |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-Channel Enhanced Power MOS FET (drain-to-source voltage of 250V, on-resistance of 0.28Ω, leakage current of 16A) |
| IRFP250PBF |
IR |
09+ |
TO-247 |
33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FET) |
| IRFP250 |
IR |
09+ |
TO-247 |
33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FET) |
| IRFP251 |
IR |
09+ |
TO-247 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247 |
| IRFP254PBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP254NPBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP254N |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP254 |
IR |
09+ |
TO-247 |
N-Channel Power MOSFETs (250V drain-to-source, 0.14Ω on-resistance, 25A leakage current) |
| IRFP260PBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 200V and on-resistance 55mΩ) |
| IRFP260 |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 200V and on-resistance 55mΩ) |
| IRFP264PBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 250V and 0.075Ω on-resistance) |
| IRFP264NPBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 250V and 0.075Ω on-resistance) |
| IRFP264N |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-to-source breakdown voltage 250V and 0.075Ω on-resistance) |
| IRFP9140PBF |
IR |
10+ |
TO-247 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS FETs) |
| IRFP9140 |
IR |
10+ |
TO-247 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS FETs) |
| IRFR010TRR |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
| IRFR010TRL |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
| IRFR010TR |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
| IRFR010 |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |