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IRFP244
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IRFP244

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
  • 厂商：IR
  • 生产批号：09+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP244的pdf资料
  • 点击询价
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  • Product Introduction

IRFP244   N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.28Ω on-resistance, 16A leakage current))

ICs related to IRFP244 include:


Model Manufacturers lot number encapsulation illustrate
IRFP150 IR 11+ TO-247 40A, 100V, 0.055 Ohm, N-Channel PowerMOSFET (40A, 100V, 0.055 Ohm, N-Channel Enhanced Power MOS FETs)
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IRFP250 IR 09+ TO-247 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FETs)
IRFP251 IR 09+ TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current))
IRFP254NPBF IR 09+ TO-247 N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current))

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IR brand product recommendation


Model Manufacturers lot number encapsulation illustrate
IRFP250PBF IR 09+ TO-247 33A, 200V, 0.085 Ohm, N-Channel PowerMOSFET (33A, 200V, 0.085 Ohm, N-Channel Enhanced Power MOS FETs)
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