主页 > 产品中心 > 场效应管
IRFP250
产品图片仅供参考 欢迎索取产品详细资料

IRFP250

  • 所属类别：场效应管
  • 产品名称：33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
  • 厂商：IR
  • 生产批号：09+
  • 封装：TO-247
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFP250的pdf资料
  • 点击询价
联系我们在线客服1 在线客服2 点击发送邮件
  • 产品介绍

IRFP250   33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)

与IRFP250相关的IC还有：


型号 厂商 批号 封装 说明
IRFP240 IR 10+ TO-247 HEXFET功率MOS场效应管
IRFP2410 IR 10+ TO-247 100V,61A,N-Channel HEXFET Power MOSFET(100V,61A,N沟道 HEXFET功率MOS场效应管)
IRFP244PBF IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
IRFP244 IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流为16A）)
IRFP250PBF IR 09+ TO-247 33A, 200V, 0.085 Ohm,N-Channel PowerMOSFET(33A, 200V, 0.085 Ohm,N沟道增强型功率MOS场效应管)
IRFP251 IR 09+ TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254NPBF IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254N IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254 IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)

çƒé—¨æœç´¢


型号 厂商 批号 封装 说明
F3069F25V Renesas 23+ QFP100 IC MCU 16BIT 512KB FLASH 100QFP
S3T-R-F5 DATALOGIC 22+ DIP photoelectric sensors
M393A8G40BB4-CWE Samsung 21+ BGA Samsung 64GB 2Rx4 PC4-3200 RDIMM DDR4-25600
TLP759(J,F) Toshiba 21+ DIP Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 8-Pin PDIP
D-U204-ELK Mors Smitt 24+ 继电器 瞬时继电器
RC16M23D28 SOURIAU-SUNBANK 2023+ 连接器 Standard Circular Contacts Crimp Socket Contact 16-20 AWG
CM300DY-24J Mitsubishi 2021+ 模块 Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
CM300DY-24Y Mitsubishi 2021+ 模块 Mitsubishi Electric 1200 V 300 IGBT模块, 双, PCB, N通道
PT02E10-6S Amphenol Industrial Operations 24+ 连接器 CONN RCPT FMALE 6POS SOLDER CUP
KP02A14-15S Amphenol Corporation 24+ 连接器 Circular Connector, Receptacle, Size 14, 15 Position, Box, Product Range:Pt Series,
U-MULTILINK-FX NXP 24+ 工具 NXP U-MULTILINK飞思卡尔烧录器USB-ML-Universal 调试器PE仿真器
KPT02E8-4P ITT 24+ 连接器 Conn Circular PIN 4 POS Solder ST Box Mount 4 Terminal 1 Port
HSC1008R2J TE 24+ DIP HSC Family of Aluminium Housed Power Resistors 75W-500W dissipation capability, Gold anodization and two mounting flanges.
27914-30T12 ITT 2023+ 连接器 Contact Dimensions - Male F80 Crimp
AF8/WA27F Daniels Manufacturing Corporation (DMC) 24+ 工具 DMC压线钳 原装进口正品
CMF8342T CMF 23+ 模块 T系列三极管放大器模块
RWR78N39R2FR Vishay 24+ DIP RES 39.2 OHM 10W 1% WW AXIAL
ETP41L18BXUU STPI 22+ 继电器 STPI/REL ETP6 Relays Non-Latching, 6 PDT, 1 A, 72 VDC
MPS100ASC 三菱 2024+ 工具 精密位置检测器
TFPT1206L1001FV Vishay Dale 24+ 1206 SENSOR PTC 1KOHM 1% 1206

IR品牌产品推荐


型号 厂商 批号 封装 说明
IRFP251 IR 09+ TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 33A I(D) | TO-247
IRFP254PBF IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254NPBF IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254N IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP254 IR 09+ TO-247 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.14Ω，漏电流为25A）)
IRFP260PBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP260 IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压200V,导通电阻55mΩ的N沟道增强型标准功率MOSFET)
IRFP264PBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264NPBF IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP264N IR 10+ TO-247 N-Channel Enhancement Mode Standard Power MOSFET(最大漏源击穿电压250V,导通电阻0.075Ω的N沟道增强型标准功率MOSFET)
IRFP9140PBF IR 10+ TO-247 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFP9140 IR 10+ TO-247 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs(19A, 100V, 0.200 Ω, P沟道功率MOS场效应管)
IRFR010TRR IR 10+ TO-252 MOSFET N-CH 50V 8.2A DPAK
IRFR010TRL IR 10+ TO-252 MOSFET N-CH 50V 8.2A DPAK
IRFR010TR IR 10+ TO-252 MOSFET N-CH 50V 8.2A DPAK
IRFR010 IR 10+ TO-252 MOSFET N-CH 50V 8.2A DPAK
IRFR014TRRPBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRR IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRPBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRLPBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)

分类检索

Copyright chip100.com © 2010-2011 MCCT粤ICP备14056028号

Related Links

wirewound resistor rectangular connector contacts crimping pliers term block hdr insulated terminals bus plug needle pusher cement resistance circular connectors ph connector