Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IRFP254PBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) |
IRFP254NPBF |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) |
IRFP254N |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) |
IRFP254 |
IR |
09+ |
TO-247 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (250V drainage voltage, 0.14Ω on-resistance, 25A leakage current)) |
IRFP260PBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with 200V maximum leakage breakdown voltage and on-resistance 55mΩ) |
IRFP260 |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with 200V maximum leakage breakdown voltage and on-resistance 55mΩ) |
IRFP264PBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω) |
IRFP264NPBF |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω) |
IRFP264N |
IR |
10+ |
TO-247 |
N-Channel Enhancement Mode Standard Power MOSFET (N-channel enhanced standard power MOSFET with maximum drain-source breakdown voltage of 250V and on-resistance 0.075Ω) |
IRFP9140PBF |
IR |
10+ |
TO-247 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS) |
IRFP9140 |
IR |
10+ |
TO-247 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs (19A, 100V, 0.200 Ω, P-Channel Power MOS) |
IRFR010TRR |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
IRFR010TRL |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
IRFR010TR |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
IRFR010 |
IR |
10+ |
TO-252 |
MOSFET N-CH 50V 8.2A DPAK |
IRFR014TRRPBF |
IR |
10+ |
TO-252 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (drainage source voltage 60V, on-resistance 0.14Ω, leakage current 8.2A)) |
IRFR014TRR |
IR |
10+ |
TO-252 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (drainage source voltage 60V, on-resistance 0.14Ω, leakage current 8.2A)) |
IRFR014TRPBF |
IR |
10+ |
TO-252 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (drainage source voltage 60V, on-resistance 0.14Ω, leakage current 8.2A)) |
IRFR014TRLPBF |
IR |
10+ |
TO-252 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (drainage source voltage 60V, on-resistance 0.14Ω, leakage current 8.2A)) |
IRFR014TRL |
IR |
10+ |
TO-252 |
N-Channel Power MOSFET (N-channel enhanced power MOS FET (drainage source voltage 60V, on-resistance 0.14Ω, leakage current 8.2A)) |