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IRFR014TRL
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IRFR014TRL

  • 所属类别：场效应管
  • 产品名称：N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
  • 厂商：IR
  • 生产批号：10+
  • 封装：TO-252
  • 库存状态：有库存
  • 库存量：9000
  • 最低订购量：1
  • 详细资料：点击查找IRFR014TRL的pdf资料
  • 点击询价
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  • 产品介绍

IRFR014TRL    N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)

与IRFR014TRL相关的IC还有：


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IRFR010 IR 10+ TO-252 MOSFET N-CH 50V 8.2A DPAK
IRFR014TRRPBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRR IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRPBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TRLPBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014TR IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014PBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014 IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR020TRL IR 10+ SOT252 MOSFET N-CH 50V 15A DPAK
IRFR020TR IR 10+ SOT252 MOSFET N-CH 50V 15A DPAK

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型号 厂商 批号 封装 说明
IRFR014TR IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014PBF IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
IRFR014 IR 10+ TO-252 N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为60V，导通电阻为0.14Ω，漏电流为8.2A）)
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IRFR024TRL IR 10+ SOT252 Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
IRFR024TR IR 10+ SOT252 Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A)
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IRFR110TRPBF IR 10+ SOT252 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
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IRFR110TRL IR 10+ SOT252 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
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