型号 |
厂商 |
批号 |
封装 |
说明 |
IRFR224
|
VISHAY |
10+ |
SOT252 |
MOSFET N-CH 250V 3.8A DPAK |
IRFR9010TRR
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 5.3A DPAK |
IRFR9010TRL
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 5.3A DPAK |
IRFR9010TR
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 5.3A DPAK |
IRFR9010
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 5.3A DPAK |
IRFR9014TRPBF
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014TRLPBF
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014TRL
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014TR
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014PBF
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9020TRR
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9020TRL
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9020TR
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9020
|
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9022
|
VISHAY |
10+ |
SOT252 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
IRFR9024TRRPBF
|
VISHAY |
10+ |
TO-252 |
P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRR
|
VISHAY |
10+ |
TO-252 |
P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRPBF
|
VISHAY |
10+ |
TO-252 |
P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |
IRFR9024TRLPBF
|
VISHAY |
10+ |
TO-252 |
P -沟道增强型场效应晶体管(- 8.8A,- 60V的,0.28Ω)性(P沟道增强型马鞍山场效应管(漏电流- 8.8A,漏源电压- 60V的导通电阻0.28Ω)) |