Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
IRFR9014TRPBF |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014TRLPBF |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014TRL |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014TR |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014PBF |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9014 |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 60V 5.1A DPAK |
IRFR9020TRR |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9020TRL |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9020TR |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9020 |
VISHAY |
10+ |
SOT252 |
MOSFET P-CH 50V 9.9A DPAK |
IRFR9022 |
VISHAY |
10+ |
SOT252 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
IRFR9024TRRPBF |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024TRR |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024TRPBF |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024TRLPBF |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024TRL |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024TR |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024PBF |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9024 |
VISHAY |
10+ |
TO-252 |
P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω)) |
IRFR9110TRPBF |
VISHAY |
10+ |
TO-252 |
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs (3.1A, 100V, 1.200 Ω, P-Channel Power MOSFETs) |