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IRFR9024TR
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IRFR9024TR

  • 所属类别：场效应管
  • 产品名称：P -沟道增强型场效应晶体管（- 8.8A，- 60V的，0.28Ω）性（P沟道增强型马鞍山场效应管（漏电流- 8.8A，漏源电压- 60V的导通电阻0.28Ω））
  • 厂商：VISHAY
  • 生产批号：10+
  • 封装：TO-252
  • 库存状态：有库存
  • 库存量：8000
  • 最低订购量：1
  • 详细资料：点击查找IRFR9024TR的pdf资料
  • 点击询价
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  • Product Introduction

IRFR9024TR  P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))

IRFR9024TR-related ICs include:


Model Manufacturers lot number encapsulation illustrate
IRFR9024TRRPBF VISHAY 10+ TO-252 P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))
IRFR9024TRR VISHAY 10+ TO-252 P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))
IRFR9024TRPBF VISHAY 10+ TO-252 P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))
IRFR9024TRLPBF VISHAY 10+ TO-252 P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))
IRFR9024TRL VISHAY 10+ TO-252 P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))
IRFR9024TR VISHAY 10+ TO-252 P-Channel Enhanced FETs (-8.8A, -60V, 0.28Ω) (P-Channel Enhanced FETs (Leakage Current - 8.8A, Drain Voltage - 60V On-Resistance 0.28Ω))

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