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IRFR9024TRL
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IRFR9024TRL

  • Category:FETs
  • Product Name:P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))
  • Manufacturers:VISHAY
  • Production Batch Number:10+
  • Encapsulation:TO-252
  • Stock Status:There is stock
  • Stock Quantity:8000
  • Minimum order quantity: 1
  • Details:Haga clic aquí para encontrar información en pdf sobre IRFR9024TRL
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  • Product introduction

IRFR9024TRLP-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))

andIRFR9024TRLRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IRFR9024TRLPBF VISHAY 10+ TO-252 P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))
IRFR9024TRL VISHAY 10+ TO-252 P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))

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Model Manufacturers lot number encapsulation illustrate
IRFR9024TR VISHAY 10+ TO-252 P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))
IRFR9024PBF VISHAY 10+ TO-252 P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))
IRFR9024 VISHAY 10+ TO-252 P-channel enhanced FET (-8.8A, -60V, 0.28Ω) (P-channel enhanced Maanshan FET (leakage current -8.8A, drain-to-source voltage -60V on-resistance 0.28Ω))
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