| Model |
Manufacturers |
lot number |
encapsulation |
illustrate |
| IRF6631TRPBF |
IR |
10+ |
QFN |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 57 amperes optimized with low on resistance for applications such as act |
| IRFR2405TRLPBF |
IR |
10+ |
D-pak |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR2405TRL with Lead Free Packaging on Tape and Reel Left |
| IRF7328TRPBF |
IR |
10+ |
SOP-8 |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328TR with Lead Free Packaging on Tape and Reel |
| IRLL024ZTRPBF |
IR |
10+ |
SOT-223 |
汽车MOSFET |
| GBPC25-06W |
IR |
10+ |
DIP |
Glass Passivated Single-Phase Bridge Rectifier(钝化玻璃单相桥整流器) |
| IRFP2907PBF |
IR |
10+ |
TO-247 |
汽车MOS (VDSS = 75V , RDS(on) = 4.5mヘ , ID = 209A) |
| IRG4PC50SPBF |
IR |
10+ |
TO-247 |
INSULATED GATE BIPOLAR TRANSISTOR |
| IRF540NSTRLPBF |
IR |
10+ |
TO-263 |
100V N沟道场效应管 |
| IRLZ34NSTRLPBF |
IR |
10+ |
SOT-263 |
55V N沟道场效应管 |
| IRLR120NTRPBF |
IR |
10+ |
TO-252 |
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR120NTR with Lead Free Packaging on Tape and Reel |
| IRFB3004PBF |
IR |
10+ |
TO-247 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| IRG4PC50UPBF |
IR |
10+ |
SMD |
Insulated gate bipolar transistor UltraFast Speed IGBT |
| IRF6620TRPBF |
IR |
10+ |
SMD |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as ac |
| IRG4RC10SPBF |
IR |
10+ |
TO-252 |
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package; Similar to IRG4RC10S with Lead Free Packaging |
| IRFP4232PBF |
IR |
10+ |
TO-247 |
HEXFET Power MOSFET |
| IRF3808PBF |
IR |
10+ |
TO-220AB |
HEXFET Power MOSFET |
| IRF7103TRPBF |
IR |
10+ |
SOP-8 |
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7103TR with Lead Free Packaging on Tape and Reel |
| IRF6623TR1PBF |
IR |
10+ |
QFN |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes optimized with low on resistance for applications such as act |
| IR2110STRPBF |
IR |
10+ |
SOP-16 |
High and Low Side Driver, All High Voltage Pins On One Side, Separate Logic and Power Ground, Shut-Down in a 14-pin DIP package; A IR2110 packaged in |
| IRLL2705PBF |
IR |
10+ |
SOT-223 |
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.04ヘ , ID = 3.8A ) |