ISL70040SEHEV3Z

• Product introduction

overview
The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhanced gallium nitride (GaN) FETs in isolated topologies and step-up configurations. Operating from a supply voltage of 4.5V to 13.2V, the ISL70040SEH has inverting (INB) and noninverting (IN) inputs to meet the requirements of inverting and noninverting gate drivers for a single device.

The ISL70040SEH and ISL73040SEH feature a 4.5V gate drive voltage (V DRV), generated using an internal voltage regulator, which prevents the gate voltage from exceeding the maximum gate-source rating of the enhanced GaN FET. The gate drive voltage also features undervoltage lockout (UVLO) protection, ignoring the input (IN/INB) and keeping the OUTL on to ensure that the GaN FET is off whenever the V DRV is below the UVLO threshold.

The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14.7V regardless of the V DD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs provide the flexibility to independently adjust the turn-on and turn-off speeds by adding additional impedance to the on/off path.

The ISL70040SEH and ISL73040SEH operate over the military temperature range of -55°C to +125°C in an 8 LD hermetic ceramic surface mount device (SMD) package or die form.
Key features
Wide Operating Voltage Range from 4.5V to 13.2V Up to 14.7V Logic Inputs (Regardless of V DD Level) Inverting and Non-Inverting Inputs Optimized to Drive Enhanced GaN FETs: Internal 4.5V Regulation Gate Drive Voltage, Independent Output with Adjustable On/Off Speed Full military temperature range operation T A = -55°C to +125°CT J = -55°C to +150°C Radiation hardness guaranteed (wafer-by-wafer) High Dose Rate (HDR) (50-300rad(Si)/ s): 100krad(Si) (ISL70040SEH only) Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si) SEE hardness (see ISL70040SEH, ISL73040SEH SEE report for details) No SEB/L LET TH, V DD = 14.7V: 86MeV•cm 2/mg without SET, LET TH, V DD = 13.2V: 86MeV • cm 2 / mg