ISL70591SEH

• Product introduction

overview
The ISL70591SEH, ISL73591SEH, ISL70592SEH, and ISL73592SE are radiation-hardened precision 100μA and 1mA current source ICs. These devices offer excellent accuracy of ±1% over a wide operating voltage range of 3V to 40V and over a temperature range of -55°C to +125°C. The device is fabricated using Renesas' proprietary PR40 silicon-on-insulator (SOI) process and is not affected by a single event latch.

The high output impedance of the devices makes them insensitive to voltage drops on long lines. They can withstand a forward operating voltage of 40V and a reverse voltage of -0.5V.

The ISL7x591SEH and ISL7x592SEH are two-terminal floating current sources that allow them to be used in high-side, low-side, and dual-side load applications such as sensor excitation, bias networks, low voltage references, float voltage references, and ramp generators. Current sources are primarily used in thermistors and other sensor excitation applications widely used in aerospace processes.

The ISL7x591SEH and ISL7x592SEH are available in a 4 LD ceramic flat package and die form. The temperature range is -55°C to +125°C.

 
Key features
Electrical Screening to DLA SMD 5962-18217 Wide Operating Voltage Range: 3V to 40V Initial High Accuracy (+V = 20V at +25°C):
- ISL7x591SEH：±0.34％
- ISL7x592SEH: ±0.30% high output impedance:
- ISL7x591SEH: 189MΩ (typical)
- ISL7x592SEH: 14MΩ (typical) Fully floating: Acceptance test without ground connection emissions - ISL70591SEH and ISL70592SEH
- High dose rate (50-300rad (Si) / s): 100krad (Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si) radiation acceptance test - ISL73591SEH and ISL73592SEH
- Low dose rate (0.01rad(Si)/s): 75krad(Si)SEE hardness
- SEB/SEL LET TH, + V = 35V: 86 MeV•cm 2/mg
- SET duration (time recovery) ≤ 125 μs