ISL72813SEHEV1Z

• Product introduction

overview
The ISL72813SEH is an radiation-hardened, high-voltage, high-current drive circuit manufactured using Renesas' proprietary PR40 silicon-on-insulator process technology to mitigate the effects of a single event. The device integrates 32 driver circuits with high voltage, common emitter, and open-collector outputs, a breakdown voltage of 42V, and a rated peak current of 600mA.

To further reduce solution size and improve system power density, the ISL72813SEH integrates a 5-bit to 32-channel decoder (plus enable pin) and level shifting circuitry to reference the output of the decoder to a negative voltage. This conveniently allows the user to select 1 of the 32 available drive channels. The input of the decoder is TTL/CMOS compatible and can be easily connected to a CPU, FPGA or μ processor.

The ISL72813SEH operates over the military temperature range of -55°C to +125°C and is available in a 44 Ld hermetic ceramic lead-free chip carrier (CLCC) package.
Key features
Electrical shielding to SMD 5962-17208 Acceptance test to 100krad(Si)(HDR) and 50krad(Si)(LDR) wafers Integrated 5-bit to 32-channel decoder Integrated level shifting circuit High collector current output High voltage output Grounded metal cover Full military temperature range operation T A = -55°C to +125°CT J = -55°C to +150°C radiation tolerance HDR (50rad(Si)/s to 300rad(Si)/ s): 100krad(Si)LDR (0.01rad(Si)/s): 50krad(Si) see hardness without SEB/SEL LET TH, V CE = 33V: 86.4 MeV•cm2/mg