IXFH80N10Q
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IXFH80N10Q

  • Category:FETs
  • Product Name:N-channel enhanced mode HiPerFET power MOSFET (N-channel enhanced HiPerFET power MOSFET with maximum drain-to-source breakdown voltage 100V and on-resistance 15mΩ)
  • Manufacturers:IXYS
  • Production Batch Number:10+
  • Encapsulation:TO-247
  • Stock Status:There is stock
  • Stock Quantity:123000
  • Minimum order quantity: 1
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  • Product introduction

IXFH80N10QN-channel enhanced mode HiPerFET power MOSFET (N-channel enhanced HiPerFET power MOSFET with maximum drain-to-source breakdown voltage 100V and on-resistance 15mΩ)

andIXFH80N10QRelated ICs are:


Model Manufacturers lot number encapsulation illustrate
IXTH200N075T IXYS 10+ TO-247 N-channel enhanced mode HiPerFET power MOSFET
IXTH160N075T IXYS 10+ TO-247 N-channel enhanced mode HiPerFET power MOSFET
IXTH110N25T IXYS 10+ TO-247 N-channel enhanced mode HiPerFET power MOSFET
IXTA32N20T IXYS 10+ TO-247 N-channel enhanced mode HiPerFET power MOSFET
IXFX250N0P IXYS 10+ TO-247 N-channel enhanced mode HiPerFET power MOSFET (N-channel enhanced HiPerFET power MOSFET with maximum drain-to-source breakdown voltage 100V and on-resistance 15mΩ)
IXFH100N25P IXYS 10+ TO-247 N-channel enhanced mode HiPerFET power MOSFET
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