Brand new original import, Hong Kong spot
KXTE9-2050 Speed Sensor
Tri-axis, 2G, digital output (I2C), 3x3x0.9mm LGA
The KXTE9 advanced directional detection features changes in the landscape, portrait, front-up, down-facing conditions. This sophisticated embedded algorithm eliminates the need for continuous data collection and complex calculations performed by a single microprocessor. There are several adjustable parameters, and the screen rotation algorithm can be optimized for an intuitive user experience. In addition to orientation detection, the KXTE9 features activity monitoring functions. Reports changes in the motion state of the device, whether it is moving (active) or not moving (inactive). A manufactured product with consistent product performance in terms of use conditions, KXTE9 operates a range of 1.8V to 3.6V DC supply voltages.
These high-performance silicon micromachined linear accelerometers and inclinometers consist of sensing elements and an application-specific integrated circuit packaged in a 3x3x0.9mm grid array (LGA). The sensor element manufactures monocrystalline silicon's proprietary deep reactive ion etching (DRIE) process and environmental protection, sealed in a wafer-level silicon cap.
The principle of differential capacitance in the function of the sensing element. Acceleration leads to displacement of the silicon structure due to changes in capacitance. An ASIC that uses a standard CMOS manufacturing process to detect and convert to an analog output voltage, which is a change in capacitance proportional to acceleration. The sensor design uses common mode to counteract errors that reduce process variability and environmental stress. The voltage on one board is digitally A/D converted and accessed through a cross-integrated circuit (I2C).