LM5060Q1MM

• Available in automotive grade/AEC Q-100
• Wide operating input voltage range: 5.5 V to +65 V
• Quiescent current of less than 15μA in disabled mode
• Securely connect capacitive loads to control output rise time
• The charge pump is an external N-channel MOSFET gate driver
• Adjustable undervoltage lockout (UVLO) hysteresis
• UVLO services require a secure redundant system as the second enable input
• Programmable fault detection delay time
• The load fault of the MOSFET is detected after latching
• Active low open-drain power supply good (nPGD) output
• Adjustable Input Overvoltage Protection (OVP)
• Restart immediately after overvoltage shutdown

illustrate

The LM5060 high-side protection controller provides an intelligent control of high-side n-channel MOSFETs during normal on/off transitions and fault conditions. Inrush current control with an almost constant rise time for the output voltage. The power good output indicates when the output voltage reaches the input voltage and the MOSFET is fully on. Input undervoltage lockout hysteresis and programmable input overvoltage protection. The enable input provides remote on/off control. A programmable undervoltage lockout input that can be used as the second enabled safe redundant input. Initial start-up of a single capacitor scheme, V_GSFault detection delay time, V_DSFault detection of the transition of delay time and continuous overcurrent V_DSFailure detection delay time. When the detected fault condition persists longer than the allowable fault delay time, the MOSFET is locked until the enable input or undervoltage lockout input switching is lower and higher.

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• Automotive body electronics
• Industrial power distribution and control