LM5060Q1MM

• Available in automotive grade/AEC Q-100
• Wide operating input voltage range: 5.5 V to +65 V
• Quiescent current less than 15μA in disabled mode
• Secure connection capacitive load control output rise time
• The charge pump is an external N-channel MOSFET gate driver
• Adjustable undervoltage lockout (UVLO) hysteresis
• UVLO's services require a securely redundant system as a second enabling input
• Programmable fault detection delay time
• The load fault of the MOSFET is detected after latching
• Active low open-drain good (nPGD) output
• Adjustable Input Overvoltage Protection (OVP)
• Restart immediately after overvoltage shutdown

illustrate

The LM5060 high-side protection controller provides intelligent control of a high-side n-channel MOSFET during normal on/off conversion and fault conditions. Inrush current control, almost constant rise time of output voltage. The power supply is good for the output indication, when the output voltage reaches the input voltage and the MOSFET is fully on. Input undervoltage lockout hysteresis and programmable input overvoltage protection is provided. Enable input provides remote on/off control. A programmable undervoltage lockout input that can be used as a second enabled safety redundant input. The initial start of the individual capacitor scheme, the transition of the VS fault detection delay time, the V DS fault detection delay time, and the continuous overcurrent V DS fault detection delay time. When the time still present under the detected fault condition is longer than the allowable fault delay time, the MOSFET is locked until the enable input or undervoltage lock input switches low or high.

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• Automotive body electronics
• Industrial power distribution and control