LM5100CMAX

• Drive high-side and low-side N-channel MOSFETs
• Independent high and low driver logic inputs
• The bootstrap supply voltage is up to 118V DC
• Fast propagation time (25 ns typical)
• 1000 pF load driver with 8 ns rise and fall times
• مطابقة ممتازة لتأخير الانتشار (3 نانوثانية بشكل نموذجي)
• Supply railway undervoltage lockout
• Low power consumption
• Pin compatible with HIP2100/HIP2101

illustrate

The LM5100A/B/C and LM5101A/B/C high voltage gate drivers are used to drive high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. The floating high-side driver is capable of operating with supply voltages up to 100V. The "A" version provides a full 3A gate drive, while the "B" and "C" versions provide 2A and 1A. Independently controlled outputs with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). An integrated high-voltage diode provides bootstrap capacitor charging for the high-side gate driver. A powerful level translator consumes low power while high speed, low power consumption and provides clean control logic level translation to the high-side gate driver. Two low-side and high-side rails provide undervoltage lockout. These devices are available in standard SOIC-8-pin and PSOP-8-pin LLP-10-pin packages. The LM5100C and LM5101C are also available in eMSOP-8 packages. Also available in the LLP-8-pin package of the LM5101A.