LM5100CMYE

• Drive both high-side and low-side N-channel MOSFETs
• Independent high and low drive logic inputs
• The bootstrap supply voltage is up to 118V DC
• Fast propagation time (25 ns typical)
• The driver has a 1000 pF load with 8 ns rise and fall times
• Excellent propagation delay matching (3 ns typical)
• Supply railway undervoltage lockout
• Low power consumption
• Pin-compatible HIP2100/HIP2101

illustrate

The LM5100A/B/C and LM5101A/B/C high voltage gate drivers are designed to drive both high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. Floating high-side driver with supply voltage up to 100V operation. The "A" version provides full gate drive 3A, while the "B" and "C" versions provide 2A and 1A, respectively. Independently controlled outputs with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). The integrated high-voltage diode provides a chargeable high-side gate drive bootstrap capacitor. A powerful level shifter works while consuming low power and provides a clean-stage transition from control logic to high-side gate drivers at high speeds. Both low-side and high-side power rails are available on undervoltage lockout. These devices are available in standard SOIC-8-pin, PSOP-8-pin LLP and 10-pin packages. The LM5100C and LM5101C are also available in the eMSOP-8 package. 该LM5101A还提供LLP - 8脚封装