LM5100CMYE

• Simultaneous high-side and low-side N-channel MOSFETs are driven
• Independent high and low drive logic inputs
• The bootstrap supply voltage is up to 118V DC
• Fast propagation time (25 nanoseconds typical)
• The driver has a rise and fall time of 8 ns and a 1000 pF load
• Excellent transmission delay matching (3 nanosecond typical)
• Supply rail undervoltage locking
• Low power consumption
• Pin-compatible HIP2100/HIP2101

illustrate

The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. Floating high-side drivers and supply voltages up to 100V operating capability. The "A" version provides a full gate drive of 3A, while the "B" and "C" versions are 2A and 1A respectively. Independently controlled outputs with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C). The integrated high-voltage diode provides a charging high-side gate drive bootstrap capacitor. A powerful level translator works while consuming low power consumption and providing a clean-level transition from control logic to high-side gate drivers at high speeds. Both low-side and high-side power rails are available for undervoltage lockout. These devices are available in standard SOIC - 8-pin, PSOP - 8-pin LLP and 10-pin packages. The LM5100C and LM5101C are also available in an eMSOP-8 package. The LM5101A is also available in LLP - 8-pin package