LM5102SD

• Drive high-side and low-side N-channel MOSFETs
• Independent programmable high-side and low-side rising edge delays
• The bootstrap supply voltage range is up to 118V DC
• Fast shutdown propagation delay (25 ns typical)
• A 1000 pF load driver has 15 ns rise and fall times
• Supply railway undervoltage lockout
• Low power consumption
• The timer terminates the passage midway through the sequence

illustrate

The LM5102 high voltage gate driver is used to drive high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. The floating high-side driver operates with supply voltages up to 100V. Independently controlled output. The rising edge of each output can be independently programmed for resistor delay. An integrated high voltage diode provides high-side gate driver bootstrap capacitor charging. A powerful level translator consumes low power while high speed, low power consumption and provides clean control logic level translation to the high-side gate driver. The low- and over-high rails provide undervoltage lockout. This device is available in a standard MSOP-10 package pin LLP - 10-pin package.