LM5102SD

• Drives high-side and low-side N-channel MOSFETs
• Independent programmable high-end and low-end rising edge delays
• The bootstrap supply voltage range is up to 118V DC
• Fast shutdown propagation delay (25 ns typical)
• The 1000 pF load driver has a rise and fall time of 15 ns
• Supply rail undervoltage locking
• Low power consumption
• Timers terminate the middle of a passing sequence

illustrate

The LM5102 high-voltage gate driver is used to drive high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. The floating high-side driver operates with a supply voltage of up to 100V. Independently controlled output. The rising edge of each output can be independently programmed with a resistor delay. The integrated high-voltage diode provides high-side gate driver bootstrap capacitor charging. A powerful level translator consumes low power consumption at high speeds while providing clean control logic level conversion to high-side gate drivers. The low and high rails provide undervoltage lockout. This device is available in a standard MSOP-10-pin LLP-10-pin package.