LM5105SD

• Drives high-side and low-side N-channel MOSFETs
• 1.8A peak gate drive current
• The bootstrap supply voltage range is up to 118V DC
• Integrated bootstrap diodes
• Single TTL-compatible input
• Programmable Turn-On Delay (Dead Time)
• Enable input pins
• Fast shutdown propagation delay (typical for 26ns)
• The driver has a 15ns rise and fall time of 1000pF
• Supply rail undervoltage locking
• Low power consumption

illustrate

The LM5105 is a high-voltage gate driver designed to drive high and low N-channel MOSFETs synchronous buck or half-bridge configurations. The floating high-side driver is capable of working with rail voltages up to 100V. A single control input is compatible with a switching transition of the TTL signal level and an external resistor scheme dead time via a tightly matched on-delay circuit. The high-voltage diode provides high-side gate driver bootstrap capacitor charging. Powerful level-shifting technology works while consuming low power consumption and high speed to provide clean output conversion. The low or bootstrap supply voltage is below the operating threshold, and the undervoltage latching disables the gate driver. The LM5105 is available in a thermally enhanced 10-pin LLP plastic package.