LM5105SD

• Drive high-side and low-side N-channel MOSFETs
• 1.8A peak gate drive current
• The bootstrap supply voltage range is up to 118V DC
• Integrated bootstrap diode
• Single TTL-compatible input
• Programmable turn-on delay (dead time)
• Enable the input pin
• Fast shutdown propagation delay (26ns typical)
• The driver has a rise and fall time of 15ns at 1000pF
• Supply railway undervoltage lockout
• Low power consumption

illustrate

The LM5105 is a high voltage gate driver designed to drive high and low N-channel MOSFET synchronous buck or half-bridge configurations. The floating high-side driver is capable of working with railway voltages up to 100V. A single control input is compatible with the TTL signal level and an external resistor scheme dead-time switching transition, through tightly matched on-delay circuitry. The high-voltage diode provides high-side gate driver bootstrap capacitor charging. Powerful level-shifting technology works while consuming power, low power and high speed to provide clean output conversion. Low or bootstrap high-side supply voltage below the operating threshold, undervoltage lockout disables the gate driver. The LM5105 is available in a thermally enhanced 10-pin LLP plastic package.