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LM5110-1M
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LM5110-1M

  • 所属类别:驱动芯片
  • 产品名称:5A双负输出电压能力的复合门极驱动器
  • 厂商:NSC
  • 生产批号:08+
  • 封装:SOP-8
  • 库存状态:有库存
  • 库存量:5700
  • 最低订购量:1
  • 详细资料:点击查找LM5110-1M的pdf资料
  • 点击询价
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  • Product Introduction

peculiarity

  • Independently drive two N-channel MOSFETs
  • Compound CMOS and bipolar outputs reduce output current variations
  • 5A sink/3A source current capability
  • Two channels can be connected in parallel with dual drive currents
  • Independent inputs (TTL compatible)
  • Fast propagation time (25 ns typical)
  • Fast rise and fall times (14 ns/12 ns rise/fall 2 nF load)
  • Dedicated input ground pin (IN_REF) for separate or single-supply operation
  • The output swing ranges from V CC to V EE can be entered into negative phase
  • Two non-inverting, dual-reversed, and combined configurations are available
  • Shutdown input to provide low-power mode
  • Power rail under undervoltage lockout protection
  • The pins are compatible with industry-standard gate drivers

illustrate

The LM5110 dual gate driver replaces the industry-standard gate driver with improved peak output current and efficiency. Each "composite" output drive stage includes MOS and bipolar transistors running in parallel to sink more than 5A capacitive load peaks together. The unique feature of the combination of MOS and bipolar devices reduces current changes in drive voltage and temperature. The separate input and output ground pins provide negative drive capability, allowing the user to drive the MOSFET gate with both positive and negative VGS voltages. The gate driver control input is referenced to a specialized input field (IN_REF). The gate driver output swing ranges from V CC output ground V EE to IN_REF negative. MOSFETs capable of accommodating negative VGS voltages Gate driving threshold low-voltage MOSFETs are often used as synchronous rectifiers to reduce losses. When driving with a conventional forward gate voltage, the IN_REF and V EE pins are connected together and refer to a common denominator. Undervoltage lockout protection and shutdown input pins are also provided. The driver can operate while the input and output are connected to the dual drive current capability. The device is available in SOIC-8 and thermally enhanced LLP-10 packages.


apply

  • Synchronous rectifier gate driver
  • Switch-mode power gate driver
  • Solenoid valves and motor drives
  • Power level converter

The ICs associated with the LM5110-1M include:


Model Manufacturers lot number encapsulation illustrate
RWR78S5110FSB12 Vishay Dale 24+ DIP Wirewound Resistors, Military/Established Reliability, MIL-PRF-39007 Qualified, Type RWR, Up to S Level, Axial Lead
6220.5110 Schurter Electronic Components 21+ connector 6220 POWER ENTRY MODUL 10A
726151102 Wurth Electronics 15+ SMD Imported wirewound inductor
SFH5110-36 OSRAM 09+ DIP Infrared receptors
RM705110 TE 11+ N/A High-power plug-in/panel mount relays
LM5110-3MX/NOPB NSC 10+11+   Hong Kong spot, imported original
LM5110-1SD/NOPB NSC 10+11+   Hong Kong spot, imported original
LM5110-1MX/NOPB NSC 10+11+   Hong Kong spot, imported original
LM5110-2SD/NOPB NSC 10+11+   Hong Kong spot, imported original
LM5110-3M/NOPB   10+11+   Hong Kong spot, imported original
LM5110-1M/NOPB   10+11+   Hong Kong spot, imported original
DS16EV5110ASQ/NOPB   10+11+   Hong Kong spot, imported original
LM5110-3SD/NOPB   10+11+   Hong Kong spot, imported original
DS34RT5110SQE NXP 10+ QFN48 DVI, HDMI input equalization and output de-emphasis retimer
DS34RT5110TSQ NXP 10+ LLP DVI, HDMI input equalization and output de-emphasis retimer
DS34RT5110TSQX NXP 10+ LLP DVI, HDMI input equalization and output de-emphasis retimer
DS34RT5110SQX NXP 10+ LLP DVI, HDMI input equalization and output de-emphasis retimer
DS34RT5110TSQE NXP 10+ 48-LLP DVI, HDMI input equalization and output de-emphasis retimer
DS22EV5110SQ NXP 10+ LLP DVI, HDMI Extended Reach Equalizer with Retimer and Output De-Emphasis
DS22EV5110SQX NXP 11+ SO DVI, HDMI extension to achieve equalization and retimer

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