LM5110-2M

• Drive two N-channel MOSFETs independently
• Compound CMOS and bipolar outputs reduce output current variation
• 5A sink/3A source current capability
• Two channels can be connected in parallel with dual drive currents
• Independent input (TTL compatible)
• Fast propagation time (25 ns typical)
• Fast rise and fall times (14 ns/12 ns ramp/drop 2 nF load)
• Available in two non-inverting, dual inverting and combination configurations
• Supply of railway undervoltage lockout protection (UVLO)
• The LM5111-4 UVLO is configured to drive PFET, via OUT_A and NFET via OUT_B
• Pin compatible with industry standard gate drivers

illustrate

The LM5111 two-gate driver replaces the industry-standard gate driver to improve peak output current and efficiency. Each "composite" output drive stage consists of MOS and bipolar transistors running in parallel, sinking together over a 5A capacitive load peak. The unique feature of the combination of MOS and bipolar devices reduces current variations in drive voltage and temperature. Undervoltage lockout protection is also provided. The driver can operate simultaneously with the input and output connected to the dual drive current capability. The device is available in either a SOIC-8 package or a thermally enhanced MSOP8-EP package.