LM5110-2SDX

• Independently drive two N-channel MOSFETs
• Compound CMOS and bipolar outputs reduce output current variations
• 5A sink/3A source current capability
• Two channels can be connected in parallel with dual drive currents
• Independent inputs (TTL compatible)
• Fast propagation time (25 ns typical)
• Fast rise and fall times (14 ns/12 ns rise/fall 2 nF load)
• Two non-inverting, dual-reversed, and combined configurations are available
• Supply Rail Undervoltage Lockout Protection (UVLO)
• The LM5111 – 4 UVLO is configured to drive PFET, via OUT_A and NFET through OUT_B
• Compatible with industry-standard gate driver pins

illustrate

The LM5111 dual-gate driver replaces the industry-standard gate driver, improving peak output current and efficiency. Each "composite" output drive stage includes MOS and bipolar transistors running in parallel to sink more than 5A capacitive load peaks together. The unique feature of the combination of MOS and bipolar devices reduces current changes in drive voltage and temperature. Undervoltage lockout protection is also provided. The driver can operate while the input and output are connected to the dual drive current capability. The device is available in a SOIC-8 package or a thermally enhanced MSOP8-EP package.