LM5111-1MY

• Independently drive two N-channel MOSFETs
• Composite CMOS and bipolar outputs reduce output current variations
• 5A sink/3A source current capability
• The drive current can be doubled for two channels connected in parallel
• (TTL compatible) independent inputs
• Fast propagation time (25 nanoseconds typical)
• Fast rise and fall times (14 ns/12 ns rise/2 nF load drop)
• Dual non-inverting, inverting, and dual combination configurations are available
• Supply Rail Undervoltage Lockout Protection (UVLO)
• LM5111 – 4 UVLO configured as a drive, passing through OUT_A OUT_B PFET and NFET
• The pins are compatible with industry-standard gate drivers

illustrate

The LM5111 dual gate driver replaces the industry-standard gate driver that improves peak output current and efficiency. Each "composite" output drive stage includes the MOS and bipolar transistors running in parallel, along with sinking capacitor loads in excess of 5A peaks. The combination of MOS and the uniqueness of bipolar devices reduces drive current, voltage, and temperature variations. Undervoltage lockout protection is also available. The driver can operate with the input and connect to the dual drive current capability output in parallel. This device is available in either a SOIC-8 package or a thermally enhanced MSOP8-EP package.