LM5112MY

• Compound CMOS and bipolar outputs reduce output current variations
• 7A sink/3A current source
• Fast propagation time (25 ns typical)
• Fast rise and fall times (14 ns/12 ns rise/fall 2 nF load)
• Inverting and non-inverting inputs provide a single device or configuration
• Power rail under undervoltage lockout protection
• Dedicated input land (IN_REF) for separate power supply or single supply operation
• Power-enhanced 6-pin LLP package (3.0 mm x 3.0 mm) or thermally enhanced MSOP8-EP package
• The output swing ranges from V CC to V EE can be entered into negative phase

illustrate

The LM5112 MOSFET gate driver provides high peak gate drive current in a tiny LLP-6 package (SOT23 package equivalent to footprint) or an 8-pin exposed pad MSOP package, increasing power consumption required for high-frequency operation. The composite output drive stage consists of the MOS and bipolar transistors running in parallel, sinking together to exceed the capacitive load 7A peak. The unique feature of the combination of MOS and bipolar devices reduces current changes in drive voltage and temperature. Undervoltage latching protection to prevent insufficient opening voltage of gates that damage the MOSFET. The LM5112 provides both inverting and non-inverting inputs to meet the requirements of inverting and non-inverting with a single device type gate drive.